#                  File: mAMIn08.xst
#					     For: Cross-section process definition file
#                Vendor: MOSIS: American Microsystems, Inc.
#   			 Technology: 0.8U, N-Well (Lambda = 0.5um, Technology = SCNPC) 
# Technology Setup File: mAMIn08.tdb
# Copyright (c)  1993
# Tanner Research, Inc.  All rights reserved
# ************************************************************************
#
#       L-Edit
#Step Layer Name Depth  Label	 [Angle[offset]]	Comment
#----------------------------------------------------------------------
gd   -             10		p-							#  1. Substrate
id  "N Well"        3		n-							#  2. n-Well
id  "ndiff"         0.9         n+              75     0
id  "pdiff"         0.9         p+              75     0
gd   -              0.6		-							#  5. Field Oxide
e    Active         0.6		-		45					#  6. 
gd   -              0.04	-							#  7. Gate Oxide
gd   Poly           0.4		-							#  8. Polysilicon
e    "Not Poly"        0.44	-		45					#  9.
gd   -              0.9 	-							# 10. 
e   "Poly Contact" 0.9    -		60					# 11.
e   "Active Contact" 0.9    -		60					# 11.
e   "Gnd"           1.5    -        60
gd   Metal1         0.6    -							# 12. Metal 1
e   "Not Metal1"    0.6    -		45					# 13.
gd   -              1	   -							# 14. 
e    Via            1	   -		60					# 15.
gd   Metal2         1.15   -							# 16. Metal 2
e    "Not Metal2"   1.15   -		45					# 17.
gd   -              2      -							# 18. Overglass
#e    Overglass      2      -							# 19.