; configuration file for scmos-sos with lamba = 0.1u (CD 0.5 um ;(Leff=0.35) UTSi CMOS) ;Process parameters were extracted from Maki4a WF#12 ;Peregrine TM Copyright 1998 ;Peregrine Confidential and Proprietary ; ; 10/04/98 capga .00345145 ;gate capacitance -- area, pf/sq-micron ; calculated with Tox (gate oxide thickness) = 100A lambda 0.1 ; micron/lambda lowthresh 0.4 ; logic low threshold as a normalized voltage highthresh 0.6 ; logic high threshold as a normalized voltage cntpullup 0 ; irrelevant, cmos technology; no depletion transistors diffperim 0 ; don't include diffusion perimeters for sidewall cap. subparea 0 ; poly over transistor won't count as part pf bulk-poly cap. diffext 0 ; diffusion extension for each transistor ; channel resistance for both N-type and P-type MOS transistors ; ; These are generated from UTSi CMOS process with ; HSPICE BSIM3 level 42 model and the getres script ; in irsim's distribution.... ; ; C=1000.00fF, P(w=2.40, l=0.50), N(w=1.20, l=0.50) resistance n-channel dynamic-high 1.2 0.50 10960.0 resistance n-channel dynamic-low 1.2 0.50 6619.0 resistance n-channel static 1.2 0.50 7404.3 resistance p-channel dynamic-high 2.4 0.50 4207.0 resistance p-channel dynamic-low 2.4 0.50 7573.0 resistance p-channel static 2.4 0.50 4995.7 ; C=1000.00fF, P(w=3.60, l=0.50), N(w=1.80, l=0.50) resistance n-channel dynamic-high 1.8 0.50 6372.0 resistance n-channel dynamic-low 1.8 0.50 3841.0 resistance n-channel static 1.8 0.50 4288.5 resistance p-channel dynamic-high 3.6 0.50 2754.0 resistance p-channel dynamic-low 3.6 0.50 4867.0 resistance p-channel static 3.6 0.50 3208.8 ; C=1000.00fF, P(w=4.80, l=0.50), N(w=2.40, l=0.50) resistance n-channel dynamic-high 2.4 0.50 4493.0 resistance n-channel dynamic-low 2.4 0.50 2715.0 resistance n-channel static 2.4 0.50 3002.3 resistance p-channel dynamic-high 4.8 0.50 2053.0 resistance p-channel dynamic-low 4.8 0.50 3587.0 resistance p-channel static 4.8 0.50 2352.4 ; C=1000.00fF, P(w=6.00, l=0.50), N(w=3.00, l=0.50) resistance n-channel dynamic-high 3.0 0.50 3471.0 resistance n-channel dynamic-low 3.0 0.50 2106.0 resistance n-channel static 3.0 0.50 2299.2 resistance p-channel dynamic-high 6.0 0.50 1641.0 resistance p-channel dynamic-low 6.0 0.50 2841.0 resistance p-channel static 6.0 0.50 1850.2 ; C=1000.00fF, P(w=12.00, l=0.50), N(w=6.00, l=0.50) resistance n-channel dynamic-high 6.0 0.50 1627.0 resistance n-channel dynamic-low 6.0 0.50 1012.0 resistance n-channel static 6.0 0.50 1031.4 resistance p-channel dynamic-high 12.0 0.50 834.8 resistance p-channel dynamic-low 12.0 0.50 1398.0 resistance p-channel static 12.0 0.50 872.7 ; C=1000.00fF, P(w=18.00, l=0.50), N(w=9.00, l=0.50) resistance n-channel dynamic-high 9.0 0.50 1066.0 resistance n-channel dynamic-low 9.0 0.50 680.6 resistance n-channel static 9.0 0.50 644.5 resistance p-channel dynamic-high 18.0 0.50 571.5 resistance p-channel dynamic-low 18.0 0.50 928.4 resistance p-channel static 18.0 0.50 553.1 ; C=1000.00fF, P(w=24.00, l=0.50), N(w=12.00, l=0.50) resistance n-channel dynamic-high 12.0 0.50 792.5 resistance n-channel dynamic-low 12.0 0.50 520.0 resistance n-channel static 12.0 0.50 456.7 resistance p-channel dynamic-high 24.0 0.50 441.7 resistance p-channel dynamic-low 24.0 0.50 697.2 resistance p-channel static 24.0 0.50 395.6 ; C=1000.00fF, P(w=48.00, l=0.50), N(w=24.00, l=0.50) resistance n-channel dynamic-high 24.0 0.50 395.8 resistance n-channel dynamic-low 24.0 0.50 285.1 resistance n-channel static 24.0 0.50 192.8 resistance p-channel dynamic-high 48.0 0.50 245.8 resistance p-channel dynamic-low 48.0 0.50 354.6 resistance p-channel static 48.0 0.50 165.0 ; C=1000.00fF, P(w=72.00, l=0.50), N(w=36.00, l=0.50) resistance n-channel dynamic-high 36.0 0.50 266.2 resistance n-channel dynamic-low 36.0 0.50 208.1 resistance n-channel static 36.0 0.50 106.2 resistance p-channel dynamic-high 72.0 0.50 181.2 resistance p-channel dynamic-low 72.0 0.50 240.8 resistance p-channel static 72.0 0.50 90.9