; IRSIM Parameter file for MOSIS SCMOS-SUB Technology ; with lamba = 0.4 (0.8um minimum drawn feature size, HP MCOS26g) ; process. ; This set of parameters are extracted with HSspice foundry level 39 ; model. ; ; Jen-I pi@isi.edu 12/21/95 capga .0019714 ; gate capacitance -- area, pf/sq-micron ; calculated with Tox (gate oxide thickness) = 175 A lambda 0.4 ; microns/lambda lowthresh 0.4 ; logic low threshold as a normalized voltage highthresh 0.6 ; logic high threshold as a normalized voltage cntpullup 0 ; irrelevant, cmos technology; no depletion transistors diffperim 0 ; don't include diffusion perimeters for sidewall cap. subparea 0 ; poly over transistor won't count as part pf bulk-poly cap. diffext 0 ; diffusion extension for each transistor ; Channel resistance for both N-type nad P-type MOS transistors. ; All width and length has been adjusted to SCMOS technology from ; HP foundry rules. ; These are generated form HP foundry HSpice level 39 corner ; parameters ; ; C=1000.00ff, P(w= 2.40u,l= 0.80u), N(w= 1.20u,l= 0.80u) resistance n-channel dynamic-high 1.2 0.8 17616.0 resistance n-channel dynamic-low 1.2 0.8 9277.0 resistance n-channel static 1.2 0.8 9789.0 ; K_p/K_n = 2.0 resistance p-channel dynamic-high 2.4 0.8 8159.0 resistance p-channel dynamic-low 2.4 0.8 18094.0 resistance p-channel static 2.4 0.8 9255.0 ; ; C=1000.00ff, P(w= 3.20u,l= 0.80u), N(w= 1.60u,l= 0.80u) resistance n-channel dynamic-high 1.6 0.8 10646.0 resistance n-channel dynamic-low 1.6 0.8 5635.0 resistance n-channel static 1.6 0.8 5992.0 ; K_p/K_n = 2.0 resistance p-channel dynamic-high 3.2 0.8 5577.0 resistance p-channel dynamic-low 3.2 0.8 12303.0 resistance p-channel static 3.2 0.8 6285.0 ; ; C=1000.00ff, P(w= 4.00u,l= 0.80u), N(w= 2.00u,l= 0.80u) resistance n-channel dynamic-high 2.0 0.8 7631.0 resistance n-channel dynamic-low 2.0 0.8 4059.0 resistance n-channel static 2.0 0.8 4227.0 ; K_p/K_n = 2.0 resistance p-channel dynamic-high 4.0 0.8 4243.0 resistance p-channel dynamic-low 4.0 0.8 9324.0 resistance p-channel static 4.0 0.8 4748.0 ; ; C=1000.00ff, P(w= 6.40u,l= 0.80u), N(w= 3.20u,l= 0.80u) resistance n-channel dynamic-high 3.2 0.8 4132.0 resistance n-channel dynamic-low 3.2 0.8 2230.0 resistance n-channel static 3.2 0.8 2218.0 ; K_p/K_n = 2.0 resistance p-channel dynamic-high 6.4 0.8 2492.0 resistance p-channel dynamic-low 6.4 0.8 5409.0 resistance p-channel static 6.4 0.8 2720.0 ; ; C=1000.00ff, P(w= 8.00u,l= 0.80u), N(w= 4.00u,l= 0.80u) resistance n-channel dynamic-high 4.0 0.8 3167.0 resistance n-channel dynamic-low 4.0 0.8 1726.0 resistance n-channel static 4.0 0.8 1679.0 ; K_p/K_n = 2.0 resistance p-channel dynamic-high 8.0 0.8 1963.0 resistance p-channel dynamic-low 8.0 0.8 4234.0 resistance p-channel static 8.0 0.8 2115.0 ; ; C=1000.00ff, P(w=16.00u,l= 0.80u), N(w= 8.00u,l= 0.80u) resistance n-channel dynamic-high 8.0 0.8 1470.0 resistance n-channel dynamic-low 8.0 0.8 837.0 resistance n-channel static 8.0 0.8 747.0 ; K_p/K_n = 2.0 resistance p-channel dynamic-high 16.0 0.8 980.0 resistance p-channel dynamic-low 16.0 0.8 2040.0 resistance p-channel static 16.0 0.8 984.0 ; ; C=1000.00ff, P(w=32.00u,l= 0.80u), N(w=16.00u,l= 0.80u) resistance n-channel dynamic-high 16.0 0.8 737.0 resistance n-channel dynamic-low 16.0 0.8 443.0 resistance n-channel static 16.0 0.8 330.0 ; K_p/K_n = 2.0 resistance p-channel dynamic-high 32.0 0.8 531.0 resistance p-channel dynamic-low 32.0 0.8 1025.0 resistance p-channel static 32.0 0.8 449.0 ; ; C=1000.00ff, P(w=64.00u,l= 0.80u), N(w=32.00u,l= 0.80u) resistance n-channel dynamic-high 32.0 0.8 385.0 resistance n-channel dynamic-low 32.0 0.8 257.0 resistance n-channel static 32.0 0.8 162.0 ; K_p/K_n = 2.0 resistance p-channel dynamic-high 64.0 0.8 305.0 resistance p-channel dynamic-low 64.0 0.8 547.0 resistance p-channel static 64.0 0.8 211.0 ; ; C=1000.00ff, P(w=80.00u,l= 0.80u), N(w=40.00u,l= 0.80u) resistance n-channel dynamic-high 40.0 0.8 307.0 resistance n-channel dynamic-low 40.0 0.8 220.0 resistance n-channel static 40.0 0.8 110.0 ; K_p/K_n = 2.0 resistance p-channel dynamic-high 80.0 0.8 261.0 resistance p-channel dynamic-low 80.0 0.8 452.0 resistance p-channel static 80.0 0.8 164.0 ; ; C=2000.00ff, P(w=160.00u,l= 0.80u), N(w=80.00u,l= 0.80u) resistance n-channel dynamic-high 80.0 0.8 152.0 resistance n-channel dynamic-low 80.0 0.8 109.0 resistance n-channel static 80.0 0.8 55.0 ; K_p/K_n = 2.0 resistance p-channel dynamic-high 160.0 0.8 130.0 resistance p-channel dynamic-low 160.0 0.8 225.0 resistance p-channel static 160.0 0.8 80.0 ; ; C=3000.00ff, P(w=300.00u,l= 0.80u), N(w=150.00u,l= 0.80u) resistance n-channel dynamic-high 150.0 0.8 86.0 resistance n-channel dynamic-low 150.0 0.8 63.0 resistance n-channel static 150.0 0.8 44.0 ; K_p/K_n = 2.0 resistance p-channel dynamic-high 300.0 0.8 74.0 resistance p-channel dynamic-low 300.0 0.8 128.0 resistance p-channel static 300.0 0.8 33.0 ; ; C=5000.00ff, P(w=600.00u,l= 0.80u), N(w=300.00u,l= 0.80u) resistance n-channel dynamic-high 300.0 0.8 44.0 resistance n-channel dynamic-low 300.0 0.8 34.0 resistance n-channel static 300.0 0.8 14.0 ; K_p/K_n = 2.0 resistance p-channel dynamic-high 600.0 0.8 40.0 resistance p-channel dynamic-low 600.0 0.8 64.0 resistance p-channel static 600.0 0.8 12.0