** MOSIS PARAMETRIC TEST RESULTS ** ** RUN: N86L VENDOR: HP-NID ** TECHNOLOGY: SCN05H FEATURE SIZE: 0.5 microns ** ** ** INTRODUCTION: This report contains the lot average results obtained by MOSIS ** from measurements of MOSIS test structures on each wafer of ** this fabrication lot. SPICE parameters obtained from similar ** measurements on a selected wafer are also attached. ** ** COMMENTS: SMN3MLC06 ** ** ** TRANSISTOR PARAMETERS W/L N-CHANNEL P-CHANNEL UNITS ** ** MINIMUM 0.9/0.60 ** Vth 0.73 -0.87 Volts ** ** SHORT 15/0.60 ** Idss 340 -166 uA/um ** Vth 0.67 -0.89 Volts ** Vpt 10.0 -9.8 Volts ** ** WIDE 15/0.60 -10.0 Volts ** Ids0 0.4 -0.0 pA/um ** ** LARGE 5.4/5.4 ** Vth 0.72 -0.90 Volts ** Vjbkd 11.7 -10.0 Volts ** Ijlk -1.5 -4.1 pA ** Gamma 0.63 0.49 V^0.5 ** ** Delta length 0.17 0.12 microns ** (L_eff = L_drawn-DL) ** Delta width 0.47 0.46 microns ** (W_eff = W_drawn-DW) ** K' (Uo*Cox/2) 74.9 -23.6 uA/V^2 ** ** COMMENTS: Delta L varies with design technology as a result of the different ** mask biases applied for each technology. Please adjust the delta L ** in this report to reflect the actual design technology of your ** submission. ** Design Technology Delta L ** ----------------- ------- ** SCN_SUBM (lambda=0.3), CMOSH, ** HP_AMOS14TB no adjustment ** SCN (lambda=0.35) add 0.1 um ** ** ** FOX TRANSISTORS GATE N+ACTIVE P+ACTIVE UNITS ** Vth Poly >15.0 <-15.0 Volts ** ** PROCESS PARAMETERS N+ACTV P+ACTV POLY MTL1 MTL2 MTL3 UNITS ** Sheet Resistance 2.3 2.2 2.1 0.07 0.07 0.05 ohms/sq ** Width Variation 0.01 0.19 0.09 -0.34 microns ** (measured - drawn) ** Contact Resistance 2.3 2.2 1.9 0.63 0.43 ohms ** Gate Oxide Thickness 97 angstroms ** ** CAPACITANCE PARAMETERS N+ACTV P+ACTV POLY MTL1 MTL2 MTL3 N_WELL UNITS ** Area (substrate) 550 942 84 26 10 7 87 aF/um^2 ** Area (N+active) 3554 aF/um^2 ** Area (P+active) 3374 aF/um^2 ** Area (poly) 59 18 10 aF/um^2 ** Area (metal1) 43 16 aF/um^2 ** Area (metal2) 45 aF/um^2 ** Area (cap well) 2237 aF/um^2 ** Fringe (substrate) 236 217 aF/um ** Overlap (N+active) 377 aF/um ** Overlap (P+active) 357 aF/um ** ** CIRCUIT PARAMETERS UNITS ** Inverters K ** Vinv 1.0 1.30 Volts ** Vinv 1.5 1.45 Volts ** Vol (100 uA) 2.0 0.27 Volts ** Voh (100 uA) 2.0 2.95 Volts ** Vinv 2.0 1.54 Volts ** Gain 2.0 -20.91 ** Ring Oscillator Freq. ** DIV4 (31-stage,3.3V) 125.47 MHz ** Ring Oscillator Power ** DIV4 (31-stage,3.3V) 5.07 uW/MHz/g ** ** COMMENTS: SUBMICRON ** ** ** SPICE LEVEL2/LEVEL3 parameters not available. ** ** ** N86L SPICE BSIM3 VERSION 3.1 (HSPICE Level 49) PARAMETERS ** * DATE: 98 Sep 2 * LOT: n86l WAF: 11 .MODEL nfet NMOS ( LEVEL = 49 +VERSION = 3.1 TNOM = 27 TOX = 9.7E-9 +XJ = 1.5E-7 NCH = 1.7E17 VTH0 = 0.6983859 +K1 = 0.7659797 K2 = -0.0301713 K3 = 22.5760829 +K3B = 0.3813678 W0 = 4.768711E-6 NLX = 1E-10 +DVT0W = 0 DVT1W = 5.3E6 DVT2W = -0.032 +DVT0 = 3.466035 DVT1 = 0.5856675 DVT2 = -0.1757707 +U0 = 477.9032949 UA = 4.507669E-10 UB = 1.627355E-18 +UC = 5.785499E-11 VSAT = 1.181417E5 A0 = 0.8195622 +AGS = 0.2245344 B0 = 1.191666E-6 B1 = 4.5E-6 +KETA = -0.0169633 A1 = 0 A2 = 1 +RDSW = 1.128758E3 PRWG = 2.150294E-3 PRWB = -1E-3 +WR = 1 WINT = 2.60081E-7 LINT = 1.003766E-7 +DWG = -1.585744E-8 DWB = 8.848359E-9 VOFF = -0.121124 +NFACTOR = 1.3591886 CIT = 0 CDSC = 5.899894E-4 +CDSCD = 0 CDSCB = 0 ETA0 = 2.99992E-3 +ETAB = -1.782462E-3 DSUB = 0.0693573 PCLM = 0.7154819 +PDIBLC1 = 0.1012028 PDIBLC2 = 1.455176E-3 PDIBLCB = -1E-3 +DROUT = 0.5634651 PSCBE1 = 1.209752E10 PSCBE2 = 5.658387E-9 +PVAG = 0.0164415 DELTA = 0.01 MOBMOD = 1 +PRT = 0 UTE = -1.5 KT1 = -0.11 +KT1L = 0 KT2 = 0.022 UA1 = 4.31E-9 +UB1 = -7.61E-18 UC1 = -5.6E-11 AT = 3.3E4 +WL = 0 WLN = 1 WW = 0 +WWN = 1 WWL = 0 LL = 0 +LLN = 1 LW = 0 LWN = 1 +LWL = 0 CAPMOD = 2 CGDO = 3.77E-10 +CGSO = 3.77E-10 CGBO = 0 CJ = 5.708693E-4 +PB = 0.99 MJ = 0.6173498 CJSW = 2.679761E-10 +PBSW = 0.99 MJSW = 0.1 PVTH0 = 1.247984E-3 +PRDSW = -109.2224469 PK2 = 5.637233E-3 WKETA = -2.842339E-3 +LKETA = -6.835557E-3 ) * * .MODEL pfet PMOS ( LEVEL = 49 +VERSION = 3.1 TNOM = 27 TOX = 9.7E-9 +XJ = 1.5E-7 NCH = 1.7E17 VTH0 = -0.8702226 +K1 = 0.3959269 K2 = 0.0250288 K3 = 27.8616279 +K3B = -0.0125995 W0 = 4.638367E-6 NLX = 5.504094E-9 +DVT0W = 0 DVT1W = 5.3E6 DVT2W = -0.032 +DVT0 = 0.8963451 DVT1 = 0.3806866 DVT2 = -0.2992995 +U0 = 171.3912088 UA = 1.135428E-9 UB = 1.216149E-18 +UC = -4.87919E-11 VSAT = 1.722989E5 A0 = 0.763782 +AGS = 0.1148865 B0 = 2.729393E-6 B1 = 5E-6 +KETA = -4.979939E-3 A1 = 0 A2 = 1 +RDSW = 1.911508E3 PRWG = -8.46039E-5 PRWB = -1E-3 +WR = 1 WINT = 2.486655E-7 LINT = 7.180512E-8 +DWG = -2.269793E-8 DWB = 1.176893E-8 VOFF = -0.1092326 +NFACTOR = 2 CIT = 0 CDSC = 4.674361E-4 +CDSCD = 0 CDSCB = 0 ETA0 = 0.0141517 +ETAB = -1.074722E-3 DSUB = 0.1298303 PCLM = 3.7909533 +PDIBLC1 = 8.691023E-3 PDIBLC2 = 0.01 PDIBLCB = 0.0964449 +DROUT = 1 PSCBE1 = 2E10 PSCBE2 = 5.003682E-8 +PVAG = 0.8438828 DELTA = 0.01 MOBMOD = 1 +PRT = 0 UTE = -1.5 KT1 = -0.11 +KT1L = 0 KT2 = 0.022 UA1 = 4.31E-9 +UB1 = -7.61E-18 UC1 = -5.6E-11 AT = 3.3E4 +WL = 0 WLN = 1 WW = 0 +WWN = 1 WWL = 0 LL = 0 +LLN = 1 LW = 0 LWN = 1 +LWL = 0 CAPMOD = 2 CGDO = 3.57E-10 +CGSO = 3.57E-10 CGBO = 0 CJ = 9.406393E-4 +PB = 0.9474411 MJ = 0.4900716 CJSW = 2.195826E-10 +PBSW = 0.99 MJSW = 0.2133867 PVTH0 = 2.999625E-3 +PRDSW = -117.9159292 PK2 = 3.869835E-4 WKETA = 4.477811E-3 +LKETA = -0.0108283 ) * *